Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.
ASJC Scopus subject areas