Spin injection, transport, and read/write operation in spin-based MOSFET

Yoshiaki Saito, Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto

研究成果: Article査読

22 被引用数 (Scopus)

抄録

We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

本文言語English
ページ(範囲)8266-8273
ページ数8
ジャーナルThin Solid Films
519
23
DOI
出版ステータスPublished - 2011 9月 30
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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