Spin injection and detection between CoFe/AlO x junctions and SOI investigated by Hanle effect measurements

Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito, Nobuki Tezuka

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Spin injection and detection properties in Co 50Fe 50/AlO x/SOI (Si on insulator) junctions were investigated by using Hanle effect measurements up to room temperature. Cross-sectional transmission electron microscope images and Fourier transform images of the Co 50Fe 50/AlO x/SOI junction, fabricated by using appropriate oxidation condition, indicate the AlO x layer became single-crystal-like and spin injection and detection were realized at room temperature. In contrast, in junction fabricated by using excess oxidation condition, AlO x layer became poly-crystal-like and spin injection was not realized though spin injection was realized below 150 K. These results indicate that appropriate oxidation is essential to fabricate AlO x tunnel barrier with good crystallinity and realize spin injection and detection at room temperature.

本文言語English
論文番号07C316
ジャーナルJournal of Applied Physics
111
7
DOI
出版ステータスPublished - 2012 4 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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