Spin Hall effect in a semiconductor two-dimensional hole gas with strong spin-orbit coupling

J. Wunderlich, B. Kaestner, K. Nomura, A. H. MacDonald, J. Sinova, T. Jungwirth

研究成果: Conference contribution

抄録

Semiconductor spintronics is based on the controlled generation of localized spin densities. Finite spin densities in semiconductors have traditionally [1] been generated by external magnetic fields, by circularly polarized light sources, or by spin injection from spin-aligning materials, such as ferromagnets. Recently there has been considerable interest [2] in an alternate strategy in which edge spin densities are generated electrically via the spin Hall effect (SHE) [3, 4], i.e., in a planar device by the current of spins oriented perpendicular to the plane that is generated by and flows perpendicular to an electric field. The SHE has traditionally been thought of as a consequence of spin-dependent chirality in impurity scattering that occurs in systems with spin-orbit (SO) coupling [5, 6]. Recently it has been recognized that the SHE also has an intrinsic contribution due to SO coupling in a perfect crystal [7, 8]. In this work, we study SHE induced edge spin accumulation in a two-dimensional hole gas (2DHG) with strong SO interactions. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the spin-orbit split heavy-hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel, a nonzero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder, suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.

本文言語English
ホスト出版物のタイトルProceedings of the 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2005
出版社World Scientific Publishing Co. Pte Ltd
ページ140-145
ページ数6
ISBN(印刷版)9812568581, 9789812568588
DOI
出版ステータスPublished - 2006
外部発表はい
イベント8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2005 - Hatoyama, Saitama, Japan
継続期間: 2005 8月 222005 8月 25

出版物シリーズ

名前Proceedings of the 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2005

Other

Other8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2005
国/地域Japan
CityHatoyama, Saitama
Period05/8/2205/8/25

ASJC Scopus subject areas

  • 原子分子物理学および光学

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