The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/ (Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone.
|ジャーナル||Journal of Applied Physics|
|出版ステータス||Published - 2000 5 1|
|イベント||44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States|
継続期間: 1999 11 15 → 1999 11 18
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