Spin accumulation in a quantum cluster resolved in tunnel junctions

A. Brataas, M. Hirano, J. Inoue, Y. V. Nazarov, G. E.W. Bauer

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Transport through a small metal island attached to two ferromagnetic reservoirs by tunnel junctions is considered. The discrete energy levels due to size quantization, the Coulomb charging energy and the non-equilibrium spin accumulation due to the spin-dependent tunneling rates are taken into account. Analytical results for the zero-bias conductance and magnetoresistance are found. In the nonlinear current-voltage regime, numerical calculations reveal discrete jumps in the tunnel magnetoresistance when the applied voltage is in resonance with the energy difference associated with tunneling of an electron into the ground or excited states of the quantum cluster. Effects of spin-dependent discrete energy levels in magnetic quantum clusters on the tunnel magnetoresistance are studied in detail.

本文言語English
ページ(範囲)2329-2335
ページ数7
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
4 A
DOI
出版ステータスPublished - 2001 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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