Spin accumulation and decay in magnetic Schottky barriers

Gerrit E.W. Bauer, Yaroslav Tserkovnyak, Arne Brataas, Jun Ren, Ke Xia, Maciej Zwierzycki, Paul J. Kelly

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.

本文言語English
論文番号155304
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
15
DOI
出版ステータスPublished - 2005 10月 15
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Spin accumulation and decay in magnetic Schottky barriers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル