Spectroscopic observation of the interface states at the SiO2/4H-SiC(0001) interface

Yoshiyuki Yamashita, Takahiro Nagata, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using operando hard x-ray photoelectron spectroscopy. Two types of interface states were observed: one with continuous interface states in the entire SiC band-gap and the other with sharp interface states formed below the conduction band minimum (CBM). The continuous interface states in the whole gap were attributed to carbon clusters while the sharp interface states observed near the CBM were due to the Si2−C=O state and/or the Si2−C=C−Si2 state at the SiO2/SiC interface.

本文言語English
ページ(範囲)56-60
ページ数5
ジャーナルe-Journal of Surface Science and Nanotechnology
17
DOI
出版ステータスPublished - 2019 7 4

ASJC Scopus subject areas

  • バイオテクノロジー
  • バイオエンジニアリング
  • 凝縮系物理学
  • 材料力学
  • 表面および界面
  • 表面、皮膜および薄膜

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