We report on two key issues for CVD-HfO2 gate dielectric which influence on their reliability. The first ones are extrinsic defects, i.e., 1) two types of extrinsic defects which lead to a large electrical leakage. The other ones are interfaces inside the film, i.e., 2) stoichiometric interface due to a Si out-diffusion from substrate and 3) interface defined by dielectric constant transition which was formed by a diffusion mechanism of Si into HfO2. Lower Weibull slope β is mainly determined by a distance from Si substrate to the k-transition interface. Although the β becomes smaller due to the k-transition interface, it was clarified to be improved by a single layered silicate without k-transition interface.
|出版ステータス||Published - 2002 1 1|
|イベント||2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States|
継続期間: 2002 6 11 → 2002 6 13
|Other||2002 Symposium on VLSI Technology Digest of Technical Papers|
|Period||02/6/11 → 02/6/13|
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