Specific structural factors influencing on reliability of CVD-HfO2

Yoshinao Harada, Masaaki Niwa, Sungjoo Lee, Dim Lee Kwong

研究成果: Paper査読

26 被引用数 (Scopus)

抄録

We report on two key issues for CVD-HfO2 gate dielectric which influence on their reliability. The first ones are extrinsic defects, i.e., 1) two types of extrinsic defects which lead to a large electrical leakage. The other ones are interfaces inside the film, i.e., 2) stoichiometric interface due to a Si out-diffusion from substrate and 3) interface defined by dielectric constant transition which was formed by a diffusion mechanism of Si into HfO2. Lower Weibull slope β is mainly determined by a distance from Si substrate to the k-transition interface. Although the β becomes smaller due to the k-transition interface, it was clarified to be improved by a single layered silicate without k-transition interface.

本文言語English
ページ26-27
ページ数2
出版ステータスPublished - 2002 1 1
外部発表はい
イベント2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States
継続期間: 2002 6 112002 6 13

Other

Other2002 Symposium on VLSI Technology Digest of Technical Papers
国/地域United States
CityHonolulu, HI
Period02/6/1102/6/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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