Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy

S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, A. Uedono

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

A spatio-time-resolved cathodoluminescence (STRCL) system was constructed by replacing the electron beam (e-beam) gun of a conventional scanning electron microscope by the in-house manufactured pulsed e-beam gun, which is excited using femtosecond laser pulses. By using this system, STRCL measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηint eq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηint eq of 20 % with τCL of 3.3 ns.

本文言語English
ホスト出版物のタイトルECS Transactions
出版社Electrochemical Society Inc.
ページ1-8
ページ数8
42
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2013

出版物シリーズ

名前ECS Transactions
番号42
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

ASJC Scopus subject areas

  • 工学(全般)

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