Spatially resolved cathodoluminescence spectra of InGaN quantum wells

Shigefusa Chichibu, Kazumi Wada, Shuji Nakamura

研究成果: Article査読

375 被引用数 (Scopus)

抄録

Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially integrated CL peak consisted of emissions from complementary real spaces, and the area was smaller than 60 nm in lateral size.

本文言語English
ページ(範囲)2346-2348
ページ数3
ジャーナルApplied Physics Letters
71
16
DOI
出版ステータスPublished - 1997 10 20
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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