Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

Kentaro Watanabe; Yoshiaki Nakamura; Masakazu Ichikawa

doi:10.1016/j.apsusc.2008.02.013

Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa

材料科学高等研究所

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 ⁴ cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.

本文言語	English
ページ（範囲）	7737-7741
ページ数	5
ジャーナル	Applied Surface Science
巻	254
号	23
DOI	https://doi.org/10.1016/j.apsusc.2008.02.013
出版ステータス	Published - 2008 9 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

文献へのアクセス

10.1016/j.apsusc.2008.02.013

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引用スタイル

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title = "Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy",

abstract = " We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 4 cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.",

keywords = "Cathodoluminescence, Field emission, GaAs, Scanning tunneling microscopy",

author = "Kentaro Watanabe and Yoshiaki Nakamura and Masakazu Ichikawa",

year = "2008",

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doi = "10.1016/j.apsusc.2008.02.013",

language = "English",

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T1 - Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

AU - Watanabe, Kentaro

AU - Nakamura, Yoshiaki

AU - Ichikawa, Masakazu

PY - 2008/9/30

Y1 - 2008/9/30

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AB - We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 4 cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.

KW - Cathodoluminescence

KW - Field emission

KW - GaAs

KW - Scanning tunneling microscopy

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