TY - GEN
T1 - Spatial distribution of composion and strain in multicrystalline SiGe bulk crystal and their impact on solar cell applications
AU - Usami, Noritaka
AU - Takahashi, Tatsuya
AU - Alguno, Arnold C.
AU - Fujiwara, Kozo
AU - Ujihara, Toru
AU - Ichitsubo, Tetsu
AU - Sazaki, Gen
AU - Nakajima, Kazuo
PY - 2003/12/1
Y1 - 2003/12/1
N2 - We report on microscopic structural characterizations of multicrystalline SiGe (mc-SiGe) bulk crystal, which contains microscopic compositional distribution, and discuss possible influence on solar cell applications. By combining microscopic Raman spectroscopy and energy-dispersive x-ray analysis, the existence of built-in strain and its spatial distribution were experimentally obtained. By a simple calculation assuming ellipsoidal SiGe inclusion coherently embedded in Si-matrix, effect of the built-in strain on the band gap is quantitatively estimated. For example, an ellipsoidal Si 0.5Ge0.5 inclusion with an aspect ratio less than 0.10 is predicted to have the similar band gap with unstrained Ge. Therefore, to utilize strain is concluded to be important to realize spectroscopic response in the near infrared regime with minimizing incorporation of Ge.
AB - We report on microscopic structural characterizations of multicrystalline SiGe (mc-SiGe) bulk crystal, which contains microscopic compositional distribution, and discuss possible influence on solar cell applications. By combining microscopic Raman spectroscopy and energy-dispersive x-ray analysis, the existence of built-in strain and its spatial distribution were experimentally obtained. By a simple calculation assuming ellipsoidal SiGe inclusion coherently embedded in Si-matrix, effect of the built-in strain on the band gap is quantitatively estimated. For example, an ellipsoidal Si 0.5Ge0.5 inclusion with an aspect ratio less than 0.10 is predicted to have the similar band gap with unstrained Ge. Therefore, to utilize strain is concluded to be important to realize spectroscopic response in the near infrared regime with minimizing incorporation of Ge.
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M3 - Conference contribution
AN - SCOPUS:6344291699
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 98
EP - 101
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Y2 - 11 May 2003 through 18 May 2003
ER -