Solution-processable organic single crystals with bandlike transport in field-effect transistors

Chuan Liu; Takeo Minari; Xubing Lu; Akichika Kumatani; Kazuo Takimiya; Kazuhito Tsukagoshi

doi:10.1002/adma.201002682

Solution-processable organic single crystals with bandlike transport in field-effect transistors

Chuan Liu, Takeo Minari, Xubing Lu, Akichika Kumatani, Kazuo Takimiya, Kazuhito Tsukagoshi

研究成果: Article › 査読

342 被引用数 (Scopus)

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Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm² V ^-1 s^-1, with a highest value of 9.1 cm² V ^-1 s^-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

本文言語	English
ページ（範囲）	523-526
ページ数	4
ジャーナル	Advanced Materials
巻	23
号	4
DOI	https://doi.org/10.1002/adma.201002682
出版ステータス	Published - 2011 1月 25
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

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10.1002/adma.201002682

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AU - Liu, Chuan

AU - Minari, Takeo

AU - Lu, Xubing

AU - Kumatani, Akichika

AU - Takimiya, Kazuo

AU - Tsukagoshi, Kazuhito

PY - 2011/1/25

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N2 - Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V -1 s-1, with a highest value of 9.1 cm2 V -1 s-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

AB - Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V -1 s-1, with a highest value of 9.1 cm2 V -1 s-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

KW - charge transport

KW - field-effect transistors

KW - self-assembly

KW - single crystals

KW - solution processing

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Solution-processable organic single crystals with bandlike transport in field-effect transistors

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