Soft X-ray photoelectron spectroscopy study of activation and deactivation of impurities in shallow junctions

Kazuo Tsutsui, Masaoki Tanaka, Norifumi Hoshino, Hiroshi Nohira, Kuniyuki Kakushima, Parhat Ahmet, Yuichiro Sasaki, Bunji Mizuno, Takayuki Muro, Toyohiko Kinoshita, Takeo Hattori, Hiroshi Iwai

研究成果: Conference contribution

抄録

Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state having the lowest biding energy is assigned to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for As. It was found that the state having higher binding energy was correlated with activated As, while another state was probably correlated with deactivated As cluster.

本文言語English
ホスト出版物のタイトルICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ863-866
ページ数4
DOI
出版ステータスPublished - 2010
外部発表はい
イベント2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
継続期間: 2010 11月 12010 11月 4

出版物シリーズ

名前ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
国/地域China
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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