Soft X-ray absorption and emission study of silicon oxynitride/Si(100) interface

Yoshiyuki Yamashita, Kazuhiro Oguchi, Kozo Mukai, Jun Yoshinobu, Yoshihisa Harada, Takashi Tokushima, Shik Shin, Naoyoshi Tamura, Hiroshi Nohira, Takeo Hattori

    研究成果: Article査読

    4 被引用数 (Scopus)

    抄録

    The atom-specific electronic structure at the oxynitride/Si interface was investigated by soft X-ray absorption and emission spectroscopy in order to elucidate the relationship of the incorporation effect of nitrogen atoms at the interface with the performance of metal-oxide-silicon devices. At the interface, the conduction band minimum (CBM) decreases when the concentration of N atoms at the interface increases. For valence states, the width of the nonbonding states of N atoms increases when the concentration of N atoms is high, indicating that an inhomogeneous interface is formed. Thus, the excessive incorporation of nitrogen atoms at the SiO2/Si(100) interface decreases CBM and induces the formation of a more inhomogeneous interface, which decreases carrier mobility in the channel region.

    本文言語English
    ページ(範囲)L77-L79
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    46
    1-3
    DOI
    出版ステータスPublished - 2007 1月 12

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(その他)
    • 物理学および天文学(全般)

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