Sn nanothreads in GaAs: Experiment and simulation

I. Semenikhin, V. Vyurkov, A. Bugaev, R. Khabibullin, D. Ponomarev, A. Yachmenev, P. Maltsev, M. Ryzhii, T. Otsuji, V. Ryzhii

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

本文言語English
ホスト出版物のタイトルInternational Conference on Micro- and Nano-Electronics 2016
編集者Vladimir F. Lukichev, Konstantin V. Rudenko
出版社SPIE
ISBN(電子版)9781510609495
DOI
出版ステータスPublished - 2016
イベントInternational Conference on Micro- and Nanoelectronics - 2016, ICMNE 2016 - Zvenigorod, Russian Federation
継続期間: 2016 10 32016 10 7

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10224
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Other

OtherInternational Conference on Micro- and Nanoelectronics - 2016, ICMNE 2016
CountryRussian Federation
CityZvenigorod
Period16/10/316/10/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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