Small geometry effects in n- and p-channel polysilicon thin film transistors

Alan G. Lewis, I. Wei Wu, Tiao Y. Huang, Mitsu Koyanagi, Anne Chiang, Richard H. Bruce

研究成果: Conference article査読

20 被引用数 (Scopus)

抄録

The authors describe the results of an experimental study of small-geometry effects in n- and p-channel polysilicon TFTs (thin film transistors) fabricated on quartz substrates. Short-channel effects are shown to be severe, with significant threshold shifts observed in devices with gate lengths of less than about 8 μm and degradation in drain breakdown voltages for gate lengths below about 5 μm. The performance of simple digital CMOS circuits fabricated using TFTs with a range of gate lengths is also reported, and the improvement in speed achieved by reducing gate lengths is shown. In particular, the operation of shift registers, designed using 5-μm-long TFTs at clock frequencies in excess of 50 MHz, is demonstrated.

本文言語English
ページ(範囲)260-263
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1988 12 1
イベントTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
継続期間: 1988 12 111988 12 14

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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