TY - GEN
T1 - Skin effect suppressed NiFe/Cu electroplated multilayer wiring for high data-rate and low delay-time I/O interface board
AU - Yamaguchi, M.
AU - Yanai, T.
AU - Nakayama, H.
AU - Sai, R.
AU - Fujiwara, H.
AU - Kitai, Y.
AU - Sato, M.
AU - Sangawa, U.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/10/24
Y1 - 2018/10/24
N2 - This paper proposes a new application of skin effect suppression technology [1]-[4] for long wiring on high-speed & low-delay I/O board (typical wiring length; 200 to 1000 mm). This proposal will overcome the difficulty to further reduce the transmission losses on the I/O board with >50 Gbps data rate, which is currently performed by lowering dielectric substrate losses and surface smoothing of Cu conductor. A major challenge in this paper is to demonstrate the skin effect suppression by electroplated magnetic/conductor multilayer, instead of sputter-deposited thin film in literature [2]-[4], in order to meet coming cost-effective, thick (>5 μm), large area, and high throughput mass productivity requirements. High frequency (>10 GHz) estimation of complex permeability and measurements of low resistance devices are also investigated.
AB - This paper proposes a new application of skin effect suppression technology [1]-[4] for long wiring on high-speed & low-delay I/O board (typical wiring length; 200 to 1000 mm). This proposal will overcome the difficulty to further reduce the transmission losses on the I/O board with >50 Gbps data rate, which is currently performed by lowering dielectric substrate losses and surface smoothing of Cu conductor. A major challenge in this paper is to demonstrate the skin effect suppression by electroplated magnetic/conductor multilayer, instead of sputter-deposited thin film in literature [2]-[4], in order to meet coming cost-effective, thick (>5 μm), large area, and high throughput mass productivity requirements. High frequency (>10 GHz) estimation of complex permeability and measurements of low resistance devices are also investigated.
UR - http://www.scopus.com/inward/record.url?scp=85066811850&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85066811850&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2018.8508451
DO - 10.1109/INTMAG.2018.8508451
M3 - Conference contribution
AN - SCOPUS:85066811850
T3 - 2018 IEEE International Magnetic Conference, INTERMAG 2018
BT - 2018 IEEE International Magnetic Conference, INTERMAG 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE International Magnetic Conference, INTERMAG 2018
Y2 - 23 April 2018 through 27 April 2018
ER -