Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix

H. Takamiya, M. Miura, J. Mitsui, S. Koh, T. Hattori, Y. Shiraki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The growth mode of the self-assembled Ge islands on a Si (001) substrate was studied when the Si substrate contained the buried Ge islands grown at the lower temperature. The drastic reduction of the island sizes and the increase of the island density in the upper layer were observed in the presence of the buried islands. From the observations of the atomic force microscopy (AFM) and the photoluminescence (PL) spectroscopy, the islands in the upper layer were found to possess very similar properties to those of the buried islands. These results are explained as that the strain fields from the buried islands drastically modified the growth mode of the Ge islands in the upper layer.

本文言語English
ページ(範囲)58-61
ページ数4
ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
89
1-3
DOI
出版ステータスPublished - 2002 2月 14
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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