@article{38a716b3a33143be9b171157925f1831,
title = "Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix",
abstract = "The growth mode of the self-assembled Ge islands on a Si (001) substrate was studied when the Si substrate contained the buried Ge islands grown at the lower temperature. The drastic reduction of the island sizes and the increase of the island density in the upper layer were observed in the presence of the buried islands. From the observations of the atomic force microscopy (AFM) and the photoluminescence (PL) spectroscopy, the islands in the upper layer were found to possess very similar properties to those of the buried islands. These results are explained as that the strain fields from the buried islands drastically modified the growth mode of the Ge islands in the upper layer.",
keywords = "Buried islands, Ge islands, Hut-clusters, Low temperature growth, Ordering of the islands, Size reduction",
author = "H. Takamiya and M. Miura and J. Mitsui and S. Koh and T. Hattori and Y. Shiraki",
note = "Funding Information: The authors wish to acknowledge K. Kawaguchi and for his cooperation in MBE growth, and S. Otake for his technical support. The authors also would like to acknowledge Dr N. Usami for the fruitful discussions. This work was supported in part by a Grant-in-Aid for Scientific Research on Priority Area {\textquoteleft}New Group IV Semiconductor: Control of Properties and Application to Ultrahigh Speed Opto-Electronic Devices{\textquoteright} (Area No. 11232202) from the Ministry of Education, Culture, Sports, Science and Technology and International Priority Collaboration Program of Japan Society for the Promotion of Science.",
year = "2002",
month = feb,
day = "14",
doi = "10.1016/S0921-5107(01)00757-7",
language = "English",
volume = "89",
pages = "58--61",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",
}