Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

H. Kubota; Y. Ando; T. Miyazaki; G. Reiss; H. Brückl; W. Schepper; J. Wecker; G. Gieres

doi:10.1063/1.1588357

Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

H. Kubota, Y. Ando, T. Miyazaki, G. Reiss, H. Brückl, W. Schepper, J. Wecker, G. Gieres

工学研究科・応用物理学専攻

研究成果: Article › 査読

27 被引用数 (Scopus)

抄録

Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.

本文言語	English
ページ（範囲）	2028-2032
ページ数	5
ジャーナル	Journal of Applied Physics
巻	94
号	3
DOI	https://doi.org/10.1063/1.1588357
出版ステータス	Published - 2003 8月 1

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.1588357

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AU - Schepper, W.

AU - Wecker, J.

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Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

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