Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

H. Kubota, Y. Ando, T. Miyazaki, G. Reiss, H. Brückl, W. Schepper, J. Wecker, G. Gieres

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.

本文言語English
ページ(範囲)2028-2032
ページ数5
ジャーナルJournal of Applied Physics
94
3
DOI
出版ステータスPublished - 2003 8 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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