Site-selective deposition of single-wall carbon nanotubes by patterning self-assembled monolayer for application to thin-film transistors

Shunjiro Fujii, Takeshi Tanaka, Hiroshi Suga, Yasuhisa Naitoh, Takeo Minari, Kazuhito Tsukagoshi, Hiromichi Kataura

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We have demonstrated a site-selective deposition of uniform single-wall carbon nanotube (SWCNT) thin films on a SiO2/Si substrate using patterned self-assembled monolayers (SAMs). Non-polar octadecyltrichlorosilane (OTS) SAM was patterned by ultraviolet (UV) light through shadow mask. Then polar 3-aminopropyltriethoxysilane (APTES) SAM was selectively formed at the channel area of thin film transistors (TFTs). Finally, SWCNT thin films were selectively deposited on the TFT channel using these patterned SAMs. In this work, 25 TFTs were fabricated simultaneously on the same substrate using semiconductor-enriched SWCNTs (s-SWCNTs) solution. As a result, 23 TFTs showed high on/off current ratios over 104 without any post-treatment. It was confirmed that this method is useful to produce a large number of TFTs at a same time and applicable to the low cost production of SWCNT-integrated circuits in near future.

本文言語English
ページ(範囲)2750-2753
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
247
11-12
DOI
出版ステータスPublished - 2010 12月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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