Si/Si 1-xGe x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit

K. Watanabe; R. Tsuchiya; K. Oda; J. Yamamoto; T. Hattori; M. Matsumura; M. Kudo; K. Torii

doi:10.1109/IEDM.2011.6131685

Si/Si _1-xGe _x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit

K. Watanabe, R. Tsuchiya, K. Oda, J. Yamamoto, T. Hattori, M. Matsumura, M. Kudo, K. Torii

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We propose a novel Si/Si _1-xGe _x nanopillar superlattice solar cell enabling quantum confinement, light trapping, increased lifetime, and efficient carrier extraction for the first time. An average reflectance as low as 3.2% was achieved by adopting a hybrid nanopillar array structure. Auger recombination lifetime was significantly increased from 4×10 ^-10 s to 2 × 10 ^-8 s by barrier height engineering of the Si/Si _1-xGe _x superlattice. These two techniques are predicted to improve solar cell efficiency from 23% to 35%. Our results demonstrate the possibility of overcoming the theoretical (Shockley-Queisser) limit (30%) of conventional Si solar cell.

本文言語	English
ホスト出版物のタイトル	2011 International Electron Devices Meeting, IEDM 2011
ページ	36.4.1-36.4.4
DOI	https://doi.org/10.1109/IEDM.2011.6131685
出版ステータス	Published - 2011 12月 1
イベント	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States 継続期間: 2011 12月 5 → 2011 12月 7

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
国/地域	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2011.6131685

他のファイルとリンク

フィンガープリント

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引用スタイル

Watanabe, K., Tsuchiya, R., Oda, K., Yamamoto, J., Hattori, T., Matsumura, M., Kudo, M., & Torii, K. (2011). Si/Si _1-xGe _x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 36.4.1-36.4.4). [6131685] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131685

Watanabe, K, Tsuchiya, R, Oda, K, Yamamoto, J, Hattori, T, Matsumura, M, Kudo, M & Torii, K 2011, Si/Si _1-xGe _x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit. in 2011 International Electron Devices Meeting, IEDM 2011., 6131685, Technical Digest - International Electron Devices Meeting, IEDM, pp. 36.4.1-36.4.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131685

Watanabe K, Tsuchiya R, Oda K, Yamamoto J, Hattori T, Matsumura M その他. Si/Si _1-xGe _x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit. In 2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 36.4.1-36.4.4. 6131685. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2011.6131685

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