SiO2 surface and SiO2/Si interface topography change by thermal oxidation

N. Tokuda, M. Murata, D. Hojo, K. Yamabe

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.

本文言語English
ページ(範囲)4763-4768
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
8
DOI
出版ステータスPublished - 2001 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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