Single vacancies in slowly cooled silicon crystals

Masashi Suezawa, Ichiro Yonenaga

研究成果: Article査読

抄録

To estimate the concentration of single vacancies in slowly cooled Si crystals, we calculated the diffusion length and pair formation of vacancies during cooling. The results showed that the concentration of quenched-in single vacancies at room temperature was much lower than that at high temperature.

本文言語English
ページ(範囲)123-125
ページ数3
ジャーナルPhysica B: Condensed Matter
401-402
DOI
出版ステータスPublished - 2007 12 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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