Single photoelectron trapping, storage, and detection in a field effect transistor

Hideo Kosaka, Deepak S. Rao, Hans D. Robinson, Prabhakar Bandaru, Kikuo Makita, Eli Yablonovitch

研究成果: Article査読

58 被引用数 (Scopus)

抄録

We have demonstrated that a single photoelectron can be trapped stored and its photoelectric charge detected by a source/drain channel in a transistor. The electron trap can be photoionized and repeatedly reset for the arrival of successive individual photons. This single-photon electron transistor, operating in the λ = 1.3 μm telecommunication band, was demonstrated by using a window-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. In general, g-factor engineering allows selection rules that would convert a photon polarization to an electron-spin polarization. Such a transistor photodetector could be useful for flagging in the safe arrival of a photon in a quantum repeater. In the future, the safe arrival of a photoelectric charge would trigger the commencement of the teleportation algorithm in a quantum repeater to be used for quantum telecommunications.

本文言語English
論文番号045104
ページ(範囲)451041-451045
ページ数5
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
67
4
出版ステータスPublished - 2003 1 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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