Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Junki Mitsushio, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers [1,2]. In the graphene structures with p-i-n junctions, the injected electrons and holes have relatively low energies compared with those in optical pumping, so that the effect of carrier cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene THz lasers [3,4]. We implement a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) and experimentally observe a single mode emission at 5.2 THz at 100K. The device exhibits a nonlinear threshold-like behavior.

本文言語English
ホスト出版物のタイトル74th Annual Device Research Conference, DRC 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509028276
DOI
出版ステータスPublished - 2016 8 22
イベント74th Annual Device Research Conference, DRC 2016 - Newark, United States
継続期間: 2016 6 192016 6 22

出版物シリーズ

名前Device Research Conference - Conference Digest, DRC
2016-August
ISSN(印刷版)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period16/6/1916/6/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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