Single-crystalline films of the homologous series InGaO3(ZnO)m grown by reactive solid-phase epitaxy

Hiromichi Ohta, Kenji Nomura, Masahiro Orita, Masahiro Hirano, Kazushige Ueda, Toshiyuki Suzuki, Yuichi Ikuhara, Hideo Hosono

    研究成果: Article査読

    162 被引用数 (Scopus)

    抄録

    Single-crystalline thin films of the homologous series InGaO3(ZnO)m (where m is an integer) are fabricated by the reactive solid-phase epitaxy (R-SPE) method. Specifically, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified. High-temperature annealing of bilayer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on yttria-stabilized zirconia (YSZ) substrate allows for the growth of single-crystalline film with controlled chemical composition. The epitaxial ZnO thin layer plays an essential role in determining the crystallographic orientation, while the ratio of the thickness of both layers controls the film composition.

    本文言語English
    ページ(範囲)139-144
    ページ数6
    ジャーナルAdvanced Functional Materials
    13
    2
    DOI
    出版ステータスPublished - 2003 2 1

    ASJC Scopus subject areas

    • 化学 (全般)
    • 材料科学(全般)
    • 凝縮系物理学

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