Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer

Wataru Nakao, Hiroyuki Fukuyama

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A noble method forming single crystalline AlN films has been developed as a new substrate for blue/UV light emitters. Sapphire substrates have been nitrided by appropriate CO-N2 gas mixtures saturated with graphite based on the chemical potential diagram of the Al-N-O-C system. The nitrided surface of sapphire consists of consecutive layers of AlN and γ-aluminum oxynitride (γ-ALON) with low-level dislocation density, where the γ-ALON layer spontaneously forms as an equilibrium phase and acts as a buffer. The lattice mismatch between sapphire substrate and AlN layer has been effectively reduced by using the γ-ALON buffer, which significantly attributes to the growth of single crystalline AlN.

本文言語English
ページ(範囲)302-308
ページ数7
ジャーナルJournal of Crystal Growth
259
3
DOI
出版ステータスPublished - 2003 12月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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