TY - JOUR
T1 - Single crystal growth of type I Na–Si clathrate by using Na–Sn flux
AU - Morito, Haruhiko
AU - Shimoda, Masashi
AU - Yamane, Hisanori
N1 - Funding Information:
This work was supported in part by a grant from Center for Exploration of New Inorganic Materials, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan .
Publisher Copyright:
© 2016 Elsevier B.V.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/9/15
Y1 - 2016/9/15
N2 - Single crystals of type I Na–Si clathrate, Na8Si46, were synthesized by heating Na, Na4Si4, and Na15Sn4 at 723 K under an Ar gas pressure of 104 Pa for 12 h. The single crystals having {110} habit planes grew up to 1.5 mm in size due to Na evaporation from a Na–Si–Sn melt with a starting compositional molar ratio of Na/Si/Sn=5.75:2:1.
AB - Single crystals of type I Na–Si clathrate, Na8Si46, were synthesized by heating Na, Na4Si4, and Na15Sn4 at 723 K under an Ar gas pressure of 104 Pa for 12 h. The single crystals having {110} habit planes grew up to 1.5 mm in size due to Na evaporation from a Na–Si–Sn melt with a starting compositional molar ratio of Na/Si/Sn=5.75:2:1.
KW - A2. Growth from solutions
KW - A2. Single crystal growth
KW - A2. Tin flux growth
KW - B1. Clathrate compound
KW - B1. Inorganic compounds
KW - B1. Silicon compounds
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U2 - 10.1016/j.jcrysgro.2016.06.031
DO - 10.1016/j.jcrysgro.2016.06.031
M3 - Article
AN - SCOPUS:84977080526
VL - 450
SP - 164
EP - 167
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -