Single crystal growth of submillimeter diameter sapphire tube by the micro-pulling down method

Kei Kamada, Rikito Murakami, Vladimir V. Kochurikhin, Gushchina Luidmila, Kyoung Jin Kim, Yasuhiro Shoji, Akihiro Yamaji, Shunsuke Kurosawa, Yuji Ohashi, Yuui Yokota, Akira Yoshikawa

研究成果: Article査読

7 被引用数 (Scopus)

抄録

This paper addresses several aspects of the µ-PD growth technology as applied to submillimeter diameter sapphire tubes for UFD application. The μ-PD method has been successfully adapted for single crystal sapphire tube growth. A compound crucible made possible the growth of single crystal sapphire tube as small as around 0.70–0.72 mm in outer diameter and 0.28–0.29 in inner diameter over 160 mm in length at growth rate of 2–4 mm/min along 〈0 0 1〉 direction. An Ir crucible with a die composed of an equivalent hole and Ir wire was heated by RF coil in N2 atmosphere. The μ-PD method has been successfully adapted for single crystal sapphire tube growth. Grown crystal tube showed good XRC value of 30.2 arcsec.

本文言語English
ページ(範囲)45-49
ページ数5
ジャーナルJournal of Crystal Growth
492
DOI
出版ステータスPublished - 2018 6 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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