Single-crystal growth of Nb films onto molecular beam epitaxy grown (001)InAs

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Thin Nb films are grown by electron beam evaporation in an ultrahigh vacuum system on molecular beam epitaxy grown (001)InAs epitaxial layers. The Nb on InAs grows as a single-crystalline deposit at a substrate temperature of 200 °C. The orientation relation is (001)Nb//(001)InAs with [110]Nb//[110]InAs, which is different from Nb growth on GaAs. The interface between Nb and InAs features a crystal-disordered layer with a thickness of 1-2 nm, which provides relaxation from lattice mismatch. Critical current measurement of Nb/InAs/Nb junctions shows that the crystal-disordered layer does not affect the superconducting characteristics of the junctions.

本文言語English
ページ(範囲)2037-2039
ページ数3
ジャーナルApplied Physics Letters
59
16
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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