抄録
Thin Nb films are grown by electron beam evaporation in an ultrahigh vacuum system on molecular beam epitaxy grown (001)InAs epitaxial layers. The Nb on InAs grows as a single-crystalline deposit at a substrate temperature of 200 °C. The orientation relation is (001)Nb//(001)InAs with [110]Nb//[110]InAs, which is different from Nb growth on GaAs. The interface between Nb and InAs features a crystal-disordered layer with a thickness of 1-2 nm, which provides relaxation from lattice mismatch. Critical current measurement of Nb/InAs/Nb junctions shows that the crystal-disordered layer does not affect the superconducting characteristics of the junctions.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2037-2039 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 59 |
| 号 | 16 |
| DOI | |
| 出版ステータス | Published - 1991 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）