Single crystal growth of GaN by the temperature gradient Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Hirokazu Iwata, Francis J. DiSalvo

研究成果: Article査読

24 被引用数 (Scopus)

抄録

GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800°C). Colorless transparent platelet single crystals having a size of about 2mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0002) reflection of the crystals was 40-60arcsec, showing that the crystals have a good quality.

本文言語English
ページ(範囲)461-466
ページ数6
ジャーナルJournal of Crystal Growth
266
4
DOI
出版ステータスPublished - 2004 6 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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