Single crystal growth and luminescent properties of Tb doped GdTaO4 by the μ-pulling down method

Rikito Murakami, Kei Kamada, Shuichi Hatakeyama, Katsunori Ueno, Yuichiro Ueno, Takahiro Tadokoro, Yasuhiro Shoji, Shunsuke Kurosawa, Akihiro Yamaji, Yuji Ohashi, Masao Yoshino, Yuui Yokota, Akira Yoshikawa

研究成果: Article査読

4 被引用数 (Scopus)

抄録

GdTaO4 and (Gd1-xTbx)TaO4 (x = 0, 0.001, 0.02, 0.04, 0.10, and 0.16) single crystals were grown by the micro-pulling down method. The crystallographic system of the grown crystals was identified to be monoclinic (I2/a), which is the stable low-temperature phase of GdTaO4. In the photoluminescence (PL) spectra, intense emission was observed at 549 nm (5D37F4 transition of Tb3+) for every Tb doped GdTaO4. In the excitation spectra for the 549 nm emission, several excitation paths to the Tb3+ were attributed: 4f-4f transitions of Gd3+, 4f8-4f75d transitions of Tb3+ and charge transfer of TaO4 3− group. Radiolumincece spectra under X-ray irradiation were taken, and the highest emission peak was observed at 544 nm, which was ascribed to the 5D47F5 transition of Tb3+. The Tb 2% doped GdTaO4 showed the highest emission intensity at the 544 nm, and as increasing dopant concentration, the intensity decreased due to the cross-relaxation of Tb3+.

本文言語English
ページ(範囲)94-97
ページ数4
ジャーナルOptical Materials
87
DOI
出版ステータスPublished - 2019 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 分光学
  • 物理化学および理論化学
  • 有機化学
  • 無機化学
  • 電子工学および電気工学

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