Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications

Il Hyoung Jung; Yong Ho Kang; Kwang Bo Shim; Akira Yoshikawa; Tsuguo Fukuda; Keun Ho Auh

doi:10.1143/jjap.40.5706

Single crystal growth and characterizations of A₃BC₃D₂O₁₄-type compounds for piezoelectric applications

Il Hyoung Jung, Yong Ho Kang, Kwang Bo Shim, Akira Yoshikawa, Tsuguo Fukuda, Keun Ho Auh

金属材料研究所・材料設計研究部

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

A₃Nb_1-xGa_3+(5/3)xSi₂ O₁₄ (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr₃NbGa₃Si₂O₁₄ (SNGS) and Ca₃NbGa₃Si₂O₁₄ (CNGS) the single crystals showed that they were isostructural to that of A₃BC₃D₂O₁₄, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

本文言語	English
ページ（範囲）	5706-5709
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	40
号	9 B
DOI	https://doi.org/10.1143/jjap.40.5706
出版ステータス	Published - 2001 9月

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/jjap.40.5706

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引用スタイル

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title = "Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications",

abstract = "A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 {\AA}, respectively. The defect distribution and piezoelectric properties of these crystals were measured.",

keywords = "ANbGaSi O (A = Sr, Ca), Czochralski, Defect, Micro pulling-down technique, Piezoelectric",

author = "Jung, {Il Hyoung} and Kang, {Yong Ho} and Shim, {Kwang Bo} and Akira Yoshikawa and Tsuguo Fukuda and Auh, {Keun Ho}",

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T1 - Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications

AU - Jung, Il Hyoung

AU - Kang, Yong Ho

AU - Shim, Kwang Bo

AU - Yoshikawa, Akira

AU - Fukuda, Tsuguo

AU - Auh, Keun Ho

PY - 2001/9

Y1 - 2001/9

N2 - A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

AB - A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

KW - ANbGaSi O (A = Sr, Ca)

KW - Czochralski

KW - Defect

KW - Micro pulling-down technique

KW - Piezoelectric

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