Single charge detection of an electron created by a photon in a g-factor engineered quantum dot

Makoto Kuwahara; Takeshi Kutsuwa; Keiji Ono; Hideo Kosaka

doi:10.1063/1.3407513

Single charge detection of an electron created by a photon in a g-factor engineered quantum dot

Makoto Kuwahara, Takeshi Kutsuwa, Keiji Ono, Hideo Kosaka

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研究成果: Article › 査読

31 被引用数 (Scopus)

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We demonstrate that a single photoelectron can be trapped in a single quantum dot, which is formed by gate-defining with a nearly-zero g-factor quantum well, and a charge state can be detected with a quantum point contact without destruction. The detection yield has a peak of 0.27 at the resonant photon energy of the dot exciton in photon flux of 4.1× 10^-10 W/ mm². The number-resolved counting statistics revealed that the yield for the second electron trap is drastically decreased from that for the first trap because of the Coulomb-blockade effect. The demonstrated function is essential for making a high-fidelity quantum interface.

本文言語	English
論文番号	163107
ジャーナル	Applied Physics Letters
巻	96
号	16
DOI	https://doi.org/10.1063/1.3407513
出版ステータス	Published - 2010 4月 19

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3407513

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abstract = "We demonstrate that a single photoelectron can be trapped in a single quantum dot, which is formed by gate-defining with a nearly-zero g-factor quantum well, and a charge state can be detected with a quantum point contact without destruction. The detection yield has a peak of 0.27 at the resonant photon energy of the dot exciton in photon flux of 4.1× 10-10 W/ mm2. The number-resolved counting statistics revealed that the yield for the second electron trap is drastically decreased from that for the first trap because of the Coulomb-blockade effect. The demonstrated function is essential for making a high-fidelity quantum interface.",

author = "Makoto Kuwahara and Takeshi Kutsuwa and Keiji Ono and Hideo Kosaka",

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AU - Ono, Keiji

AU - Kosaka, Hideo

N1 - Funding Information: The authors would like to thank Y. Rikitake, N. Yokoshi, H. Imamura, O. Cakir, T. Takagahara, Y. Mitsumori, and K. Edamatsu for fruitful discussions and encouragement. This work was supported in part by the Strategic Information and Communications R&D Promotion Program (SCOPE) of the Ministry of Internal Affairs and Communications in Japan (Contract No. 041402001).

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N2 - We demonstrate that a single photoelectron can be trapped in a single quantum dot, which is formed by gate-defining with a nearly-zero g-factor quantum well, and a charge state can be detected with a quantum point contact without destruction. The detection yield has a peak of 0.27 at the resonant photon energy of the dot exciton in photon flux of 4.1× 10-10 W/ mm2. The number-resolved counting statistics revealed that the yield for the second electron trap is drastically decreased from that for the first trap because of the Coulomb-blockade effect. The demonstrated function is essential for making a high-fidelity quantum interface.

AB - We demonstrate that a single photoelectron can be trapped in a single quantum dot, which is formed by gate-defining with a nearly-zero g-factor quantum well, and a charge state can be detected with a quantum point contact without destruction. The detection yield has a peak of 0.27 at the resonant photon energy of the dot exciton in photon flux of 4.1× 10-10 W/ mm2. The number-resolved counting statistics revealed that the yield for the second electron trap is drastically decreased from that for the first trap because of the Coulomb-blockade effect. The demonstrated function is essential for making a high-fidelity quantum interface.

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Single charge detection of an electron created by a photon in a g-factor engineered quantum dot

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