Single atom imaging-dopant atoms in silicon-based semiconductor devices- by atom probe tomography

研究成果: Chapter

抄録

The application of atom probe tomography (APT) to observe dopant atoms in silicon-based semiconductor devices is discussed. APT is a promising tool, capable of detecting a low number of dopant atoms, and should prove useful in the further downsizing of devices. The current state of the technique and its future prospects are discussed.

本文言語English
ホスト出版物のタイトルSingle-Atom Nanoelectronics
出版社Pan Stanford Publishing Pte. Ltd.
ページ151-186
ページ数36
ISBN(印刷版)9789814316316
DOI
出版ステータスPublished - 2013 4 30

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 工学(全般)

フィンガープリント

「Single atom imaging-dopant atoms in silicon-based semiconductor devices- by atom probe tomography」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル