Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si

Minoru Sasaki, Masayuki Fujishima, Kazuhiro Hane, Hideo Miura

研究成果: Article査読

23 被引用数 (Scopus)

抄録

The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.

本文言語English
論文番号5263014
ページ(範囲)1455-1462
ページ数8
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
15
5
DOI
出版ステータスPublished - 2009 9月

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 電子工学および電気工学

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