Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices

Yasuo Shimizu, Akio Takano, Masashi Uematsu, Kohei M. Itoh

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The behavior of impurity (arsenic or boron) and silicon host atoms during ion implantation was investigated using silicon isotope superlattices. The depth profiles of silicon isotopes in the 28Si/30Si isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. The experimentally determined profiles were reproduced very well by a theoretical model to yield the average displacement of silicon atoms as a function of the depth. The critical displacement of silicon to induce the amorphous layer was determined together with cross-sectional transmission electron microscopy.

本文言語English
ページ(範囲)597-599
ページ数3
ジャーナルPhysica B: Condensed Matter
401-402
DOI
出版ステータスPublished - 2007 12 15
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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