A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)-SiO2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2-dimethylaminoethane-N,N0]manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS-SiO2 interface, and was partially embedded in the TEOS-SiO2. This Mn oxide layer was composed of a bilayer of MnOx and MnSixOy . After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.
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