Simulation of transmission electron microscope images of dislocations pinned by obstacles

From a direct observation of dislocation-obstacle interaction utilizing in situ straining experiments in transmission electron microscope (TEM), the obstacle strength factor could be evaluated from pinning angles of dislocation cusps. We simulated this process: we produced a dislocation cusp by molecular dynamics simulation of interaction between an edge dislocation and a void or a hard precipitate in copper, and calculated the TEM image by multislice method. In two-beam conditions, cusp images showed inside-outside contrast depending on the sign of the diffracting vector and other variations with the specimen geometry. The pinning angles measured on TEM images ranged up to a few tens of degrees and were between the true angles for the two partial dislocations. Characteristics and contrast mechanisms of cusp images were discussed based on those of dislocation dipoles.