Silicon self-diffusion in MgSiO3 perovskite at 25 GPa

Daisuke Yamazaki, Takumi Kato, Hisayoshi Yurimoto, Eiji Ohtani, Mitsuhiro Toriumi

研究成果: Article査読

92 被引用数 (Scopus)

抄録

Silicon self-diffusion coefficients in MgSiO3 perovskite were measured under lower mantle conditions. The MgSiO3 perovskite was synthesized and diffusion annealing experiments were conducted at pressure of 25 GPa and temperature of 1673-2073 K using a MA8 type high-pressure apparatus. The diffusion profiles were obtained by secondary ion mass spectrometry. The lattice and grain boundary diffusion coefficients (D1 and D(gb)) were determined to be D1 [m2/s] = 2.74 X 10-10 exp(-336 [kJ/mol]/RT) and δD(gb) [m3/s] = 7.12 X 10-17 exp(-311 [kJ/mol]/RT), respectively, where δ is the width of grain boundary, R is the gas constant and T is the absolute temperature. These diffusion coefficient play a key role for understanding the rheology of the lower mantle. (C) 2000 Elsevier Science B.V. All rights reserved.

本文言語English
ページ(範囲)299-309
ページ数11
ジャーナルPhysics of the Earth and Planetary Interiors
119
3-4
DOI
出版ステータスPublished - 2000 5

ASJC Scopus subject areas

  • Astronomy and Astrophysics
  • Geophysics
  • Physics and Astronomy (miscellaneous)
  • Space and Planetary Science

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