Silicon self-diffusion in heavily B-doped Si using highly pure 30Si epitaxial layer

S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, Junichi Murota, K. Wada, T. Abe

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Si self-diffusivity in heavily B-doped Si at 867-1067°C has been determined directly using highly pure isotope 30Si as a diffusion source. Samples consist of 30Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self-diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. Copyright The Electrochemical Society.

本文言語English
ホスト出版物のタイトルSilicon Materials Science and Technology X
出版社Electrochemical Society Inc.
ページ287-297
ページ数11
2
ISBN(印刷版)156677439X, 9781566774390
DOI
出版ステータスPublished - 2006
イベント10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
継続期間: 2006 5月 72006 5月 12

出版物シリーズ

名前ECS Transactions
番号2
2
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
国/地域United States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • 工学(全般)

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