Silicon-hydrogen bonds in silicon oxide near the SiO2/Si interface

Hiroki Ogawa, Naozumi Terada, Kazuhisa Sugiyama, Kazunori Moriki, Noriyuki Miyata, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori

    研究成果: Article査読

    23 被引用数 (Scopus)

    抄録

    The role of hydrogen peroxide in RCA standard clean was roughly clarified by angle-resolved photoelectron spectroscopy and infrared absorption spectroscopy such that the oxidation, by basic hydrogen peroxide results in a negligible amount of SiH bonds in native oxide, while the oxidation by acidic hydrogen peroxide results in a small amount of SiH bonds in native oxide. It is also found that oxidation in a boiling solution of HNO3 results in large amount of SiH bonds in native oxide as in the case of oxidation in a hot solution of HNO3.

    本文言語English
    ページ(範囲)836-840
    ページ数5
    ジャーナルApplied Surface Science
    56-58
    PART 2
    DOI
    出版ステータスPublished - 1992

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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