Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies

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silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar CMOS (BiCMOS) technologies are reviewed in terms of their current status and potential future directions. SiGe HBTs and BiCMOS are promising candidates for both high-speed digital operation and high-frequency analog operation for ICs and LSIs in multigigabit data-communication systems and wide-bandwidth wireless communication systems. SiGe epitaxial growth technologies, typical device structures, fabrication processes, and transistor characteristics of SiGe HBTs and BiCMOS are described. ICs and LSIs based on SiGe HBTs and BiCMOS for optical fiber links and wireless communications are also described.

元の言語English
ホスト出版物のタイトルSilicon-Germanium (SiGe) Nanostructures
出版者Elsevier Ltd
ページ473-498
ページ数26
ISBN(印刷物)9781845696894
DOI
出版物ステータスPublished - 2011 2
外部発表Yes

ASJC Scopus subject areas

  • Materials Science(all)

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