Silicon emission mechanism for oxidation process of non-planar silicon

H. Kageshima, K. Shiraishi, T. Endoh

研究成果: Conference contribution

抄録

The advance in the understanding of the mechanism of the silicon oxidation process toward the fine control of 3D MOSFETs is explained. The silicon emission mechanism can be applied to the oxidation process of silicon pillars as well as that of planar silicon. Since the geometrical effect is inevitable for the 3D MOSFETs, the silicon emission mechanism is the key to achieve highperformance non-planar 3D MOSFETs.

本文言語English
ホスト出版物のタイトルSemiconductors, Dielectrics, and Metals for Nanoelectronics 14
編集者S. Kar, K. Kita, D. Landheer, D. Misra
出版社Electrochemical Society Inc.
ページ215-226
ページ数12
5
ISBN(電子版)9781607687221
DOI
出版ステータスPublished - 2016
イベントSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10 22016 10 7

出版物シリーズ

名前ECS Transactions
番号5
75
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting
国/地域United States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • 工学(全般)

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