Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation

Shogo Sasaki, Masao Sakuraba, Hisanao Akima, Shigeo Sato

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5 at% by surface reaction of SiH4 and CH4 under low-energy Ar plasma irradiation without substrate heating in electron-cyclotron-resonance (ECR) plasma chemical-vapor deposition (CVD). Moreover, it was found that the Si-C alloy (C fraction of 1.4 at%) with an about 1%-larger vertical lattice constant than unstrained Si could be epitaxially grown on Si(100) under perfect lattice matching, which was different from the generally-reported results of tensile-strained Si-C alloy epitaxy on Si(100) at relatively higher temperatures. It was also found that deposition interruption effectively improved crystal quality of the film with an increased strain.

本文言語English
ページ(範囲)188-192
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版ステータスPublished - 2017 11 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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