Silicon carbide surface micromachining technology by tetramethylsilane- based atmospheric vapor deposition

Y. Hatakeyama, M. Esashi, S. Tanaka

研究成果: Conference article査読

抄録

Systematic study on selective silicon carbide (SiC) deposition on SiN, SiO 2 and Si was performed. Poly-SiC was deposited by atmospheric pressure vapor deposition (APCVD) using tetramethylsilane (TMS), which allows easy handling and low temperature deposition. We found a process condition enabling the selective SiC deposition as well as a design guideline for SiC surface micromachining based on the selective SiC deposition. If both process condition and design guideline are used, continuous fine-grained SiC films are deposited on SiN and Si, while SiC islands are deposited on Sio 2. SiC films on SiN are used as the microstructures, and SiC islands on SiO 2 are lifted off by SiO 2 sacrificial etching. Finally, movable SiC microstructures were fabricated by the developed surface micromachining technology.

本文言語English
論文番号4805481
ページ(範囲)709-712
ページ数4
ジャーナルProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
DOI
出版ステータスPublished - 2009 6 1
イベント22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
継続期間: 2009 1 252009 1 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 機械工学
  • 電子工学および電気工学

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