Systematic study on selective silicon carbide (SiC) deposition on SiN, SiO 2 and Si was performed. Poly-SiC was deposited by atmospheric pressure vapor deposition (APCVD) using tetramethylsilane (TMS), which allows easy handling and low temperature deposition. We found a process condition enabling the selective SiC deposition as well as a design guideline for SiC surface micromachining based on the selective SiC deposition. If both process condition and design guideline are used, continuous fine-grained SiC films are deposited on SiN and Si, while SiC islands are deposited on Sio 2. SiC films on SiN are used as the microstructures, and SiC islands on SiO 2 are lifted off by SiO 2 sacrificial etching. Finally, movable SiC microstructures were fabricated by the developed surface micromachining technology.
|ジャーナル||Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)|
|出版ステータス||Published - 2009 6 1|
|イベント||22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy|
継続期間: 2009 1 25 → 2009 1 29
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