Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

S. Sambonsuge, L. N. Nikitina, Yu Yu Hervieu, M. Suemitsu, S. N. Filimonov

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

本文言語English
ページ(範囲)1439-1444
ページ数6
ジャーナルRussian Physics Journal
56
12
DOI
出版ステータスPublished - 2014 4月

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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